3DG6型NPN型硅高頻小功率三極管參數(shù)
表1.1.14：
| 原型號(hào) | 3DG6 | 測(cè)試條件 | ||||||
| 新型號(hào) | 3DG100A | 3DG100B | 3DG100C | 3DG100D | ||||
極限參數(shù) | PCM(mW) | 100 | 100 | 100 | 100 | |||
ICM(mA) | 20 | 20 | 20 | 20 | ||||
BVCBO(V) | ≥30 | ≥40 | ≥30 | ≥40 | Ic=100μA | |||
BVCEO(V) | ≥20 | ≥30 | ≥20 | ≥30 | Ic=100μA | |||
BVEBO(V) | ≥4 | ≥4 | ≥4 | ≥4 | IE=100μA | |||
直流參數(shù) | ICBO(μA) | ≤0.01 | ≤0.01 | ≤0.01 | ≤0.01 | VEB=10V | ||
ICEO(μA) | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | VCE=10V | |||
IEBO(μA) | ≤0.01 | ≤0.01 | ≤0.01 | ≤0.01 | VEB=1.5V | |||
VBES(V) | ≤1 | ≤1 | ≤1 | ≤1 | Ic=10mA IB=1mA | |||
VCES(V) | ≤1 | ≤1 | ≤1 | ≤1 | Ic=10mA IB=1mA | |||
hFE | ≥30 | ≥30 | ≥30 | ≥30 | VCE=10V Ic=3mA | |||
| 交流 參數(shù) | fT(MHz) | ≥150 | ≥150 | ≥300 | ≥300 | VCE=10V IE=3mA f=100MHz RL=5Ω | ||
Kp(dB) | ≥7 | ≥7 | ≥7 | ≥7 | VCE=-6V IE=3mA f=100MHz | |||
Cob(pF) | ≤4 | ≤4 | ≤4 | ≤4 | VCE=10V IE=0 | |||
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